| PART |
Description |
Maker |
| K3P5VU1000F-DGCTC |
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| K3N5C1000E-DGCTC K3N5C1000E-DC120 |
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| MX29LV160CTXBI-70 MX29LV160CBXBC-90G MX29LV160CBXB |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
http://
|
| LH28F160S3HB-L13 LH28F160S3R-L13 LH28F160S3HD-L13 |
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|64PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|SDIP|64PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|SOP|56PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS |专科| 56PIN |塑料
EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS | TSSOP封装| 56PIN |塑料
|
Sharp, Corp.
M.S. Kennedy, Corp.
|
| MX26LV160 MX26LV160TXEC-70G MX26LV160BMC-55 MX26LV |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
|
MCNIX[Macronix International]
|
| BS616LV1622 BS616LV1622TIP70 BS616LV1622TC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
From old datasheet system
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| 29LV017B-70 29LV017B-90 |
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1,600位[2Mx8] CMOS单电V时仅闪存
|
Macronix International Co., Ltd.
|
| LH28F160BJHE-TTL90 LHF16J04 |
16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M 1Mx16 / 2Mx8 )Boot Block 闪速存储器)
Flash Memory 16M (1M × 16/2M × 8)
|
Sharp Corporation
Sharp Electrionic Components
|
| DT28F016 |
IC,EEPROM,NOR FLASH,1MX16/2MX8,CMOS,SOP,56PIN,PLASTIC
From old datasheet system
|
Intel
|
| AS4LC2M8S1 AS4LC2M8S1-10TC AS4LC2M8S1-12TC AS4LC2M |
3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM
3.3V 2M x 8/1M x 16 CMOS synchronous DRAM
|
ALSC[Alliance Semiconductor Corporation]
|
